High-Frequency
Dynamics in Antiferromagnetic Sr3Ir2O7
PAPER: Heidi Seinige,
Morgan Williamson, Shida Shen, Cheng Wang, Gang Cao, Jianshi
Zhou, John B. Goodenough, Maxim Tsoi,
“Electrically
tunable transport and high-frequency dynamics in antiferromagnetic Sr3Ir2O7”.
ABSTRACT:
We report dc and high-frequency transport properties
of antiferromagnetic Sr3Ir2O7. Temperature-dependent resistivity
measurements show that the activation energy of this material can be tuned by
an applied dc electrical bias. The
latter allows for continuous variations in the sample resistivity of as much as
50% followed by a reversible resistive switching at higher biases. Such a switching is of high interest for
antiferromagnetic applications in high-speed memory devices. Interestingly, we found the switching
behavior to be strongly affected by a high-frequency (microwave) current
applied to the sample. The microwaves at
3-7 GHz suppress the dc switching and produce resonance-like features that we
tentatively associated with the dissipationless magnonics recently predicted to occur in antiferromagnetic
insulators subject to ac electric fields. We have characterized the effects of
microwave irradiation on electronic transport in Sr3Ir2O7
as a function of microwave’s frequency and power, strength and direction of
external magnetic field, strength and polarity of applied dc bias, and
temperature. Our observations support the potential of antiferromagnetic
materials for high-speed/high-frequency spintronic applications.
This work was supported in part by C-SPIN,
one of six centers of STARnet, a Semiconductor
Research Corporation program, sponsored by MARCO and DARPA, by NSF grants
DMR-1207577, DMR-1265162, DMR-1600057, and DMR-1122603, and by the King
Abdullah University of Science and Technology (KAUST) Office of Sponsored
Research (OSR) under Award No. OSR-2015-CRG4-2626