Antiferromagnetic
Spintronics
Interconnections between magnetic state and transport
currents in ferromagnetic (F) heterostructures are
the basis for spintronic applications, e.g. tunneling magnetoresistance
(TMR) and spin-transfer torque (STT) phenomena provide a means to read and
write information in magnetic memory devices like STTRAM. Similar interconnections
were proposed [1] to occur in systems where F-components are replaced with antiferromagnets (AFM). We have demonstrated experimentally
the existence of such interconnections in various AFM materials.
Ø High-Frequency Dynamics in Antiferromagnetic
Sr3Ir2O7
Ø Electrically
Tunable Band Gap in Antiferromagnetic Mott Insulator
Ø Anisotropic
Magnetoresistance in Antiferromagnetic Sr2IrO4
Ø STT: FeMn/CoFe Original
observation
Ø STT in AFMs A brief review
Ø STT: IrMn/CoFe New AFM
material
Ø STT: FeMn/CoFe, IrMn/CoFe,
IrMn/NiFe New AFM/F pairs
Ø Antiferromagnetic GMR Searching for AFM analogue of GMR
1.
Núñez, A. S., Duine, R. A.,
Haney, P. M., and MacDonald, A. H. Theory of spin torques and giant magnetoresistance in antiferromagnetic metals. Phys. Rev. B 73, 214426 (2006).