Atomic Layer Deposition (ALD) System
The ALD system consists of a custom-built, hot wall stainless steel rectangular chamber with a reactor volume of 460 cm3. The ALD chamber is pumped by a turbomolecular pump to a base pressure of 2 × 10-6 torr. The carrier/purge gas (argon) and precursors are introduced through a common manifold at the front of the chamber. The gas manifold allows for seven different precursors to be connected at once, which is necessary for studying complex oxide heterostructures. The chamber is continually evacuated during the deposition process by a dual stage rotary vane pump. The ALD system is connected to the high temperature preparation chamber, which also serves as a buffer between the higher pressure ALD system to the UHV transfer line.
